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2SB649 - LGE

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2SB649 PNP Transistor

2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 7.400 7.800 2.500 1.100 2.900 1.500 Features 3 2 1 3. BASE Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage 2SB649 .

Features

3 2 1 3. BASE Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage 2SB649 -120 V 2SB649A -160 VEBO Emitter-Base Voltage -5 V IC Collector Current
  –Continuous -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless 3.000 3.200 10.60 0 11.00 0 15.30 0 15.70 0 3.900 4.100 2.100 2.300 1.170 1.370 0.000 0.300 0.660 0..

The same part from a different manufacturer

Datasheet 2SB649 - Inchange Semiconductor 2SB649

·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE.

Datasheet 2SB649 - UTC 2SB649

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power ampl.

Datasheet 2SB649 - SeCoS 2SB649

2SB649/2SB649A Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type.

Datasheet 2SB649 - Hitachi Semiconductor 2SB649

2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outli.

Datasheet 2SB649 - JCST 2SB649

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PN.

Datasheet 2SB649 - BLUE ROCKET ELECTRONICS 2SB649

TO-126 PNP 。Silicon PNP transistor in a TO-126 Plastic Package.  / Features 2SD669(A)。 Complementary pair with 2.

Datasheet 2SB649 - SavantIC 2SB649

·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low sa.

Datasheet 2SB649 - Weitron Technology 2SB649

2SB649/2SB649A PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TO-126C ABS.

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