2SB643 - Panasonic Semiconductor

2SB643 Silicon PNP epitaxial planer type Transistor

Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –.

Features

q 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings
  –30
  –60
  –25
  –50
  –7
  –1
  – 0.5 600 150
  –55 ~ +150 Unit 0.55±0.1 0.45±0.05 1.25±0.05 V 3 2 1 emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC
  –71 M Type Mold Package 2.5 2.5 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter.