Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –.
q
1.5 R0.9 R0.9
1.0±0.1
0.85
Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings
–30
–60
–25
–50
–7
–1
– 0.5 600 150
–55 ~ +150
Unit
0.55±0.1
0.45±0.05
1.25±0.05
V
3 2 1
emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A A mW ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC
–71 M Type Mold Package
2.5 2.5
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB642 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
2 | 2SB643 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
3 | 2SB645 |
INCHANGE |
PNP Transistor | |
4 | 2SB645 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SB646 |
Hitachi |
Silicon PNP Epitaxial Transistor | |
6 | 2SB646A |
Hitachi |
Silicon PNP Epitaxial Transistor | |
7 | 2SB647 |
Hitachi Semiconductor |
PNP Transistor | |
8 | 2SB647 |
Renesas Technology |
PNP Transistor | |
9 | 2SB647 |
UTC |
PNP Transistor | |
10 | 2SB647 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
11 | 2SB647-B |
MCC |
PNP Transistor | |
12 | 2SB647-C |
MCC |
PNP Transistor |