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2SB649 |
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| Part Number | 2SB649 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669 ·Minimum Lot-to-Lot variatio... |
| Features |
se Breakdown Voltage
IC= -1mA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -150mA ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
hFE-1
DC Current Gain
IC= -150mA ; VCE= -5V
hFE-2
DC Current Gain
IC=-500mA ; VCE= -5V
hFE-1 Classifications B C D 60-120 100-200 160-320 2SB649 MIN TYP. MAX UNIT -180 V -120 V -5 V -1.0 V -1.5 V -10 μA 60 320 30 NOTICE： ISC reserves t... |
| Document |
 2SB649 Data Sheet
PDF 212.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB642 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SB643 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 3 | 2SB644 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 4 | 2SB645 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB645 |
SavantIC |
SILICON POWER TRANSISTOR |
|