Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification Unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q 1.5 0.4 1.5 R0.9 R0.9 High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 R .
q q
1.5
0.4
1.5 R0.9 R0.9
High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.0±0.1
R
0.
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings
–60
–50
–7
–200
–100 400 150
–55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
3
0.55±.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB643 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SB644 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 3 | 2SB645 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB645 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB646 |
Hitachi |
Silicon PNP Epitaxial Transistor |
|
| 6 | 2SB646A |
Hitachi |
Silicon PNP Epitaxial Transistor |
|
| 7 | 2SB647 |
Hitachi Semiconductor |
PNP Transistor |
|
| 8 | 2SB647 |
Renesas Technology |
PNP Transistor |
|
| 9 | 2SB647 |
UTC |
PNP Transistor |
|
| 10 | 2SB647 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 11 | 2SB647-B |
MCC |
PNP Transistor |
|
| 12 | 2SB647-C |
MCC |
PNP Transistor |
|