2SB512 - INCHANGE

2SB512 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD365 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM.

Features

Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -3V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 2SB512 MIN TYP. MAX UNIT -60 V -60 V 5 V -1.0 V -1.5 V -1.0 μA -1.0 μA 30 160 3 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datas.