2SB513 - INCHANGE

2SB513 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage ·Complement to Type 2SD366 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-.

Features

0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -3V 2SB513 MIN TYP. MAX UNIT -60 V -60 V 5 V -1.0 V -1.5 V -1.0 μA -1.0 μA 30 160 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a gui.