·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -90V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -5A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.
ustaining Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V; IE= 0 ICEO Collector Cutoff Current VCE= -90V; IB= 0 IEBO Emitter Cutoff Current VEB= -8V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -2V fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V MIN TYP. MAX UNIT -90 V -8 V -150 V -1.0 V -1.5 V -100 μA -1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB510 |
ETC |
NPN/PNP SILICON TRANSISTOR | |
2 | 2SB511 |
INCHANGE |
PNP Transistor | |
3 | 2SB511 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB512 |
INCHANGE |
PNP Transistor | |
5 | 2SB512 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SB513 |
INCHANGE |
PNP Transistor | |
7 | 2SB514 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Silicon Transistors | |
8 | 2SB514 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB515 |
INCHANGE |
PNP Transistor | |
10 | 2SB519 |
INCHANGE |
PNP Transistor | |
11 | 2SB502 |
INCHANGE |
PNP Transistor | |
12 | 2SB502A |
Toshiba |
SILICON PNP TRANSISTOR |