2SB511 - INCHANGE

2SB511 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -1.5A ·Complement to Type 2SD325 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 5W AF power amplifier output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.

Features

Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V ; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -0.1A ; VCE= -2V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V  hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 2SB511 MIN TYP. MAX UNIT -1.0 V -1.5 V -100 μA -1 mA 40 320 35 8 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time .