2SB503 - INCHANGE

2SB503 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol.

Features

akdown Voltage IC= -0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -8V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain IC= -2.5A; VCE= -5V MIN TYP. MAX UNIT -50 V -70 V -8 V -1.5 V -1.8 V -10 μA -100 μA 30 280 15  hFE Classifications R O Y 30-70 50-140 100-280 NOTICE： ISC reserves the rights to make changes .