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·With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collect.
uration voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=-10mA; IB=0 IC=-3A ; IB=-6mA IC=-3A ; IB=-6mA VCB=-100V;IE=0 VEB=-5V;IC=0 IC=-1.5A ; VCE=-2V IC=-3A ; VCE=-2V IC=1A ; IB=0 2000 1000 MIN -100 2SB1481 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 VECO TYP. MAX UNIT V -1.5 -2.0 -2 -2.5 V V µA mA 2.0 V ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=-6mA VCC@-30V; RL=10A 0.15 0.80 0.40 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Tran.
2SB1481 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1..
2SB1481 - Toshiba Semiconductor
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications 2SB1481 Unit: mm • High DC current gain: .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1488 |
Panasonic Semiconductor |
Silicon PNP triple diffusion planer type Transistor |
|
| 2 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 3 | 2SB1400 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1400 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1401 |
Hitachi |
Low frequency power amplifier |
|
| 6 | 2SB1402 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1402 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB1403 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1403 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB1404 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB1404 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SB1405 |
Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor |
|