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·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Colle.
se breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA; RBE== IC=-100µA; IE=0 IE=-50mA; IC=0 IC=-3A ;IB=-6mA IC=-6A ;IB=-60mA IC=-3A ;IB=-6mA IC=-6A ;IB=-60mA VCB=-100V; IE=0 VCE=-100V; RBE== IC=-3A ; VCE=-3V ID=6A 1000 MIN -120 -120 -7 2SB1403 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD TYP. MAX UNIT V V V -1.5 -3.0 -2.0 -3.5 -10 -10 .
2SB1403 - INCHANGE
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 2 | 2SB1400 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1400 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1401 |
Hitachi |
Low frequency power amplifier |
|
| 5 | 2SB1402 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1402 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1404 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB1404 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB1405 |
Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor |
|
| 10 | 2SB1406 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Darlington Transistor |
|
| 11 | 2SB1407 |
Hitachi Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 12 | 2SB1407L |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|