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2SB1481 |
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| Part Number | 2SB1481 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A) ·Comple... |
| Features |
n PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -6mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -3A; VCE= -2V
2SB1481
MIN TYP. MAX UNIT
-100
V
-1.5
V
-2.0
V
-2.0 μA
-3.0 mA
2000
1000
Notice： ISC ... |
| Document |
 2SB1481 Data Sheet
PDF 206.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1481 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 2 | 2SB1481 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1488 |
Panasonic Semiconductor |
Silicon PNP triple diffusion planer type Transistor |
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| 4 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
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| 5 | 2SB1400 |
SavantIC |
SILICON POWER TRANSISTOR |
|