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2SB1481 |
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| Part Number | 2SB1481 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications 2SB1481 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) =... |
| Features |
mperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 4.5 kΩ
≈ 300 Ω Emitter
1
http://store.iiic.cc/
2006-11-21
Electrical Characteristics (Tc = 25°C)
2SB1481
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
... |
| Document |
 2SB1481 Data Sheet
PDF 134.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1481 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB1481 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1488 |
Panasonic Semiconductor |
Silicon PNP triple diffusion planer type Transistor |
|
| 4 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 5 | 2SB1400 |
SavantIC |
SILICON POWER TRANSISTOR |
|