2SB1488 - Panasonic Semiconductor

2SB1488 Silicon PNP triple diffusion planer type Transistor

Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit: mm For power switching 0.15 6.9±0.1 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 s Features q q q q High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. (Ta=25˚C) Ratings –400 –400 –7 –1 – 0.5 1 1.

Features

q q q q High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. (Ta=25˚C) Ratings
  –400
  –400
  –7
  –1
  – 0.5 1 150
  –55 ~ +150 Unit V V V A A W ˚C ˚C 0.65 max. 1.0 1.0 0.2 0.45
  –0.05 0.45
  –0.05 +0.1 +0.1 2.5±0.5 2.5±0.5 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
* 1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Note: In addition t.