2SB1145 - INCHANGE

2SB1145 PNP Transistor

·High DC Current Gain- : hFE= 2000(Min.)@IC= -1.5A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -1.5A ·Good Linearity of hFE ·With TO-220F package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current driver applications. ·Power driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

Features

CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -3mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1.5A; VCE= -3V 2SB1145 MIN TYP. MAX UNIT -120 V -1.5 V -2.0 V -50 μA -3.0 mA 2000 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a .