2SB1145 INCHANGE PNP Transistor Datasheet, en stock, prix

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2SB1145

INCHANGE
2SB1145
2SB1145 2SB1145
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Part Number 2SB1145
Manufacturer INCHANGE
Description ·High DC Current Gain- : hFE= 2000(Min.)@IC= -1.5A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -1.5A ·Good Linearity of hFE ·With TO-220F package ·Minimum Lot-to-Lot variations for r...
Features CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -3mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1.5A; VCE= -3V 2SB1145 MIN TYP. MAX UNIT -120 V -1.5 V -2.0 V -50 μA -3.0 mA 2000 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a ...

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