2SB1144 - Inchange Semiconductor

2SB1144 Silicon PNP Power Transistors

··Low Collector Saturation Voltage : VCE(sat)= -0.3V(Max)@IC= -0.5A ·Wide Area of Safe Operation ·Complement to Type 2SD1684 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo.

Features

ltage IC= -10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V MIN TYP. MAX UNIT -100 V -120 V -6 V -0.3 V -1.2 V -0.1 μA -0.1 μA 100 400 30  hFE -1Classifications Q S T 100-200 1.