2SB1149 - INCHANGE

2SB1149 PNP Transistor

·High DC Current Gain- : hFE= 2000(Min.)@IC= -1.5A ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Max)@IC= -1.5A ·Good Linearity of hFE ·With TO-126 package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Operate from Ic without predriver applications. ·Hammer driver applications. ABSOLUTE MAXIMUM RAT.

Features

MBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -1.5mA VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -1.5mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1.5A; VCE= -2V hFE-2 DC Current Gain  hFE-1 Classifications M L K IC= -3A; VCE= -2V 2000-5000 3000-7000 5000-15000 2SB1149 MIN TYP. MAX UNIT -100 2000 1000 V -1.2 V -2.0 V -10 μA -1.0 mA 15000 Switching Times ton Turn-on Ti.