2SA1657 - Inchange Semiconductor

2SA1657 Silicon PNP Power Transistor

·Collector-Emitter Breakdown Voltage VCEO= -150V(Min) ·Complement to Type 2SC4368 ·Full-mold package that does not require an insulating board or bushing when mounting. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.

Features

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -500mA; VCE= -10V COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= -500m A; VCE= -10V 2SA1657 MIN TYP. MAX UNIT -150 V -1.5 V -10 μA -10 μA 40 140 55 pF 4 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inf.