·With TO-220F package ·Complement to type 2SC4369 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-.
er saturation voltage IC=-2A ;IB=-0.2A -0.3 -0.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-2V -0.75 -1.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -1.0 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 µA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 70 240 hFE-2 DC current gain IC=-2.5A ; VCE=-2V 25 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 40 pF fT Transition frequency IC=-0.5A ; VCE=-2V 100 MHz hFE-1 Classifications O 70-140 Y 120-240 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE.
·Collector-Emitter Breakdown Voltage VCEO= -30V(Min) ·Complement to Type 2SC4369 ·Full-mold package that does not requir.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1650 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR | |
2 | 2SA1651 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SA1651 |
Inchange Semiconductor |
POWER TRANSISTOR | |
4 | 2SA1654 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SA1656 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
6 | 2SA1657 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
7 | 2SA1659 |
Inchange Semiconductor |
POWER TRANSISTOR | |
8 | 2SA1659A |
Inchange Semiconductor |
POWER TRANSISTOR | |
9 | 2SA1600 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor | |
10 | 2SA1600 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SA1600 |
Inchange Semiconductor |
POWER TRANSISTOR | |
12 | 2SA1601 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor |