2SA1659 - Inchange Semiconductor

2SA1659 POWER TRANSISTOR

·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.

Features

CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA ICBO Collector Cutoff Current VCB= -160V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -100mA ; VCE= -5V COB Output Capacitance IE=0 ; VCB= -10V;f= 1.0MHz fT Current-Gain—Bandwidth Product IC=-100m A ; VCE= -10V MIN TYP. MAX UNIT -160 V -1.5 V -1.0 μA -1.0 μA 70 240 30 pF 100 MHz  hFE Classifications O Y 70-140 120-240 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any .