·With TO-220F package ·Complement to type 2SC4370/4370A ·High transition frequency fT APPLICATIONS ·High voltage applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SA1659 VCBO Collector-base voltage 2SA1659A 2SA1659 VCEO Collector-emitter voltage.
O IEBO hFE fT COB Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance IC=-0.5A;IB=-50mA IC=-0.5A ; VCE=-5V VCB=-160V;IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-5V IC=-0.1A ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz IC=10mA ; IB=0 B 2SA1659 2SA1659A CONDITIONS MIN -160 TYP. MAX UNIT V -180 -1.5 -1.0 -1 -1 70 100 30 240 MHz pF V V μA μA hFE classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1659 2SA1659A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1659 |
Inchange Semiconductor |
POWER TRANSISTOR | |
2 | 2SA1650 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR | |
3 | 2SA1651 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SA1651 |
Inchange Semiconductor |
POWER TRANSISTOR | |
5 | 2SA1654 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
6 | 2SA1656 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
7 | 2SA1657 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
8 | 2SA1658 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SA1658 |
Inchange Semiconductor |
POWER TRANSISTOR | |
10 | 2SA1600 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor | |
11 | 2SA1600 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SA1600 |
Inchange Semiconductor |
POWER TRANSISTOR |