2SA1657 |
Part Number | 2SA1657 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Breakdown Voltage VCEO= -150V(Min) ·Complement to Type 2SC4368 ·Full-mold package that does not require an insulating board or bushing when mounting. ·Minimum Lot-to-Lot variations ... |
Features |
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -500mA; VCE= -10V
COB
Output Capacitance
IE=0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= -500m A; VCE= -10V
2SA1657
MIN TYP. MAX UNIT
-150
V
-1.5 V
-10 μA
-10 μA
40
140
55
pF
4
MHz
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inf... |
Document |
2SA1657 Data Sheet
PDF 210.19KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA1650 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR | |
2 | 2SA1651 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SA1651 |
Inchange Semiconductor |
POWER TRANSISTOR | |
4 | 2SA1654 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SA1656 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |