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·With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING (see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter v.
ation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-25mA ; IB=0 IE=-1mA ; IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-200V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-1A ; VCE=-12V 50 MIN -200 -5 2SA1333 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V -2.0 -2.5 -100 -100 V V µA µA 30 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1333 Fig.2 outline dimensions 3 .
2SA1333 - Inchange Semiconductor
·High Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device perfor.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1330 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 2 | 2SA1330 |
Kexin |
PNP Silicon Transistor |
|
| 3 | 2SA1331 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1331 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA1332 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SA1332 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 7 | 2SA1337 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 8 | 2SA1338 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SA1338 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |
|
| 10 | 2SA1339 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SA1300 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 12 | 2SA1300 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|