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2SA1333 |
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| Part Number | 2SA1333 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpo... |
| Features |
ctor Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -5A; VCE= -4V
fT
Current-Gain—Bandwidth Product
IE= -1A; VCE= -12V
2SA1333
MIN TYP. MAX UNIT
-200
V
-2.0 V
-100 μA
-100 μA
50
30
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment wh... |
| Document |
 2SA1333 Data Sheet
PDF 194.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1330 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 2 | 2SA1330 |
Kexin |
PNP Silicon Transistor |
|
| 3 | 2SA1331 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1331 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA1332 |
SavantIC |
SILICON POWER TRANSISTOR |
|