2SA1337 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • HF amplefier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1337 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage tempera.
tage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Note: B 100 to 200 V(BR)EBO I CBO I EBO hFE
* VBE VCE(sat) fT Cob NF
100 — — — — —
V V MHz pF dB
VCE =
–12 V, IC =
–2 mA I C =
–10 mA, IB =
–1 mA VCE =
–12 V, IC =
–2 mA VCB =
–10 V, IE = 0, f = 1 MHz VCE =
–6 V, IC =
–0.1 mA, Rg = 1 kΩ, f = 1 kHz
1. The 2SA1337 is grouped by hFE as follows. C 160 to 320
See characteristic curves of 2SA1031.
2
2SA1337
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300
200
100
0
100 150 50 Ambient Temperature Ta (°C)
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1330 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR | |
2 | 2SA1330 |
Kexin |
PNP Silicon Transistor | |
3 | 2SA1331 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SA1331 |
Kexin |
PNP Epitaxial Planar Silicon Transistors | |
5 | 2SA1332 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SA1332 |
Inchange Semiconductor |
POWER TRANSISTOR | |
7 | 2SA1333 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SA1333 |
Inchange Semiconductor |
POWER TRANSISTOR | |
9 | 2SA1338 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
10 | 2SA1338 |
Kexin |
PNP Epitaxial Planar Silicon Transistors | |
11 | 2SA1339 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
12 | 2SA1300 |
Toshiba Semiconductor |
TRANSISTOR |