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2SA1300 - UTC

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2SA1300 PNP EPITAXIAL SILICON TRANSISTOR

*Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) *Low Saturation Voltage *VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA) 1 SOT-89 1: Emitter 2: Collector 3:Base ABSOLUTE MAXIMUM RATINGS (TA=25°C) P.

Features


*High DC Current Gain and Excellent hFE Linearity.
*hFE(1)=140-600, (VCE= -1V,IC= -0.5A)
*hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)
*Low Saturation Voltage
*VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA) 1 SOT-89 1: Emitter 2: Collector 3:Base ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulsed (Note) www.DataSheet4U.com SYMBOL VCBO VCES VCEO VEBO Ic lcP IB Pc Tj Tstg RATIOS -20 -20 -10 -6 -2 -5 -2 750 150 -55~150 UNIT V V V A A mW °C °C Base Current Collector Power Dissipation Junction Temperatu.

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