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·With TO-220Fa package ·High VCEO APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector.
ain Transition frequency CONDITIONS IC=10mA , IB=0 IE=1mA , IC=0 IC=-0.5A, IB=-50mA IC=-0.1A ; VCE=-10V VCB=-160V, IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-10V IC=-0.1A ; VCE=-10V 60 MIN -160 -5 2SA1332 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT TYP. MAX UNIT V V -1.5 -1.0 -1.0 -1.0 240 200 V V µA µA MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1332 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 .
2SA1332 - Inchange Semiconductor
·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1330 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 2 | 2SA1330 |
Kexin |
PNP Silicon Transistor |
|
| 3 | 2SA1331 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1331 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA1333 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SA1333 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 7 | 2SA1337 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 8 | 2SA1338 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SA1338 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |
|
| 10 | 2SA1339 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SA1300 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 12 | 2SA1300 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|