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2SA1332 |
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| Part Number | 2SA1332 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power power amplifier applications. ·Driver stage amplifier applica... |
| Features |
IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -0.1A; VCE= -10V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -0.1A; VCE= -10V
fT
Current-Gain—Bandwidth Product
IC= -0.1A; VCE= -10V
2SA1332
MIN TYP. MAX UNIT
-160
V
-1.5
V
-1.0
V
-1.0 μA
-1.0 μA
60
240
200
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intend... |
| Document |
 2SA1332 Data Sheet
PDF 190.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1330 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 2 | 2SA1330 |
Kexin |
PNP Silicon Transistor |
|
| 3 | 2SA1331 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1331 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA1332 |
SavantIC |
SILICON POWER TRANSISTOR |
|