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2N6648 |
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| Part Number | 2N6648 |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 packaging ·Built-in base-emitter shunt resistors ·Very high DC current gain ·Complement to type 2N6648 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
| Features |
ication
isc Silicon PNP Darlingtion Power Transistor
2N6648
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=- 5A; IB= -10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA
VBE(on)-1 Base-Emitter On voltage
IC= -5A ; VCE= -3V
VBE(on)-2 Base-Emitter On voltage
IC= -10A ; VCE=- 3V
ICEO
Collector Cutoff current
VCE= -40V; IB= 0
IEBO
Emitter Cut-off current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -5A ... |
| Document |
 2N6648 Data Sheet
PDF 180.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6648 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 2 | 2N6648 |
TAITRON |
Darlington Power Transistor |
|
| 3 | 2N6648 |
Central Semiconductor |
PNP silicon power darington transistor |
|
| 4 | 2N6649 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 5 | 2N6649 |
TAITRON |
Darlington Power Transistor |
|