·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Bas.
IB= 2A hFE-1 DC Current Gain IC=10A; VCE= 2V 2N6561 MIN TYP. MAX UNIT 300 V 1 mA 1 mA 0.75 V 10 50 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, o.
2N6561 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N656 |
Motorola |
NPN Transistor | |
2 | 2N6560 |
Seme LAB |
Bipolar NPN Device | |
3 | 2N6560 |
INCHANGE |
Silicon NPN Power Transistor | |
4 | 2N6562 |
SSDI |
NPN Transistor | |
5 | 2N6563 |
SSDI |
NPN Transistor | |
6 | 2N6566 |
CRYSTALONCS |
NPN/PNP Switching Transistor | |
7 | 2N6567 |
CRYSTALONCS |
NPN/PNP Switching Transistor | |
8 | 2N6568 |
CRYSTALONCS |
N-Channel FET | |
9 | 2N6569 |
Mospec Semiconductor |
POWER TRANSISTORS | |
10 | 2N6569 |
SavantIC |
Silicon Power Transistor | |
11 | 2N6569 |
Seme LAB |
Bipolar NPN Device | |
12 | 2N65 |
JINAN JINGHENG |
650V N-Channel Power MOSFET |