·With TO-3 package ·Complement to type 2N6594 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB IE IEM PC Tj Tstg PARAMETER Collector-base volt.
tage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=4A; IB=0.4A IC=12A; IB=2.4A IC=4A; IB=0.4A VCE=40V; IB=0 VCB=45V; IE=0 VEB=5V; IC=0 IC=4A ; VCE=3V IC=12A ; VCE=4V IC=1.0A ; VCE=4V;f=0.5MHz 15 5 1.5 MIN 40 TYP. SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICBO IEBO hFE-1 hFE-2 fT 2N6569 MAX UNIT V 1.5 4.0 2.0 1.0 1.0 5.0 200 100 20 V V V mA mA mA MHz Switching times td .
2N6569 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N656 |
Motorola |
NPN Transistor | |
2 | 2N6560 |
Seme LAB |
Bipolar NPN Device | |
3 | 2N6560 |
INCHANGE |
Silicon NPN Power Transistor | |
4 | 2N6561 |
Seme LAB |
Bipolar NPN Device | |
5 | 2N6561 |
INCHANGE |
Silicon NPN Power Transistor | |
6 | 2N6562 |
SSDI |
NPN Transistor | |
7 | 2N6563 |
SSDI |
NPN Transistor | |
8 | 2N6566 |
CRYSTALONCS |
NPN/PNP Switching Transistor | |
9 | 2N6567 |
CRYSTALONCS |
NPN/PNP Switching Transistor | |
10 | 2N6568 |
CRYSTALONCS |
N-Channel FET | |
11 | 2N65 |
JINAN JINGHENG |
650V N-Channel Power MOSFET | |
12 | 2N65 |
GME |
N-CHANNEL POWER MOSFET |