2N6560 - INCHANGE

2N6560 Silicon NPN Power Transistor

·Collector-Emitter Breakdown Voltage- : VCEO=450V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Bas.

Features

B= 1A hFE-1 DC Current Gain IC= 5A; VCE= 2V 2N6560 MIN TYP. MAX UNIT 450 V 1 mA 1 mA 0.75 V 10 40 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or.