2N6561 INCHANGE Silicon NPN Power Transistor Datasheet, en stock, prix

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2N6561

INCHANGE
2N6561
2N6561 2N6561
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Part Number 2N6561
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABS...
Features IB= 2A hFE-1 DC Current Gain IC=10A; VCE= 2V 2N6561 MIN TYP. MAX UNIT 300 V 1 mA 1 mA 0.75 V 10 50 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, o...

Document Datasheet 2N6561 Data Sheet
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