2N656 - Motorola

2N656 NPN Transistor

2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS . NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications. • High Collector·Emitter Breakdown Voltage - BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657 • High Emitter-Base Breakdown Voltage - BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde NPN SILICON ANNULAR .

Features

or-Base Breakdown Voltage BVCBO (lC = 100~Ade, IE = 01 2N656 2N657 60 - 100 - Emitter-Base Breakdown Voltage liE = 250~Ade, IC = 01 BVEBO B.O - Collector Cutoff Current (VCB = 30 Vde, IE = 01 ICBO - 10 ON CHARACTERISTICS DC Current Gain(1) (lC = 200 mAde, VCE = 10 Vdel Collector-Emitter Saturation Voltage(1) lic = 200 mAde, IB = 40 mAdel hFE 30 90 VCE(satl - 4.0 SMALL
·SIGNAL CHARACTERISTICS Input Impedance(1) liB =8.0 mAde, VCE = 10 Vdel Unit Vde Vde Vde ~Ade Vde
*Indicates JEDEC Registered Data. (1)Pulse Test: Pulse Length = 300 MS, Duty Cycle '$ 2.0%. 2-56 ::"wj1=1 .