20N60C3 - Intersil Corporation

20N60C3 N-Channel IGBT

Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S December 2001 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-.

Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49178. Ordering Information PART NUMBER HGTG20N60C3 HGTP20N60C3 PACKAGE TO-247 TO-220AB .