HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-220) TO-220 TO-263 M3 M3.5 Test Conditions TJ = 25°C to 15.
· International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB
· High frequency IGBT
· High current handling capability
· HiPerFASTTM HDMOSTM process
· MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 5 200 1 ±100 1.7 2.0 V V mA mA nA V
· Uninterruptible power supplies (UPS)
· Switched-mode and resonant-mode power supplies
· AC motor speed control
· DC servo and robot drives
· DC choppers Advantages
· High power density
· Suitable for surface mounting
· Very low swi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 20N60 |
ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET | |
2 | 20N60 |
IXYS |
IGBT | |
3 | 20N60 |
UTC |
600V N-CHANNEL POWER MOSFET | |
4 | 20N60A |
IXYS |
IGBT | |
5 | 20N60A |
JieJie |
N-channel MOSFET | |
6 | 20N60A4D |
Fairchild Semiconductor |
HGTG20N60A4D | |
7 | 20N60A4D |
ON Semiconductor |
N-Channel IGBT | |
8 | 20N60BD1 |
IXYS Corporation |
IGBT | |
9 | 20N60C2 |
Infineon Technologies |
Power Transistor | |
10 | 20N60C3 |
Intersil Corporation |
N-Channel IGBT | |
11 | 20N60C3 |
Infineon |
Power Transistor | |
12 | 20N60C5 |
IXYS |
Power MOSFET |