Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge www.DataSheet4U.com • Periodic Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO220-3-31 P-TO263-3-2 V Ω A 0.19 20 avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ult.
everse diode dv/dt IS = 20 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 208 34.5 Operating and storage temperature Page 1 Tj , Tstg -55...+150 °C 2002-08-12 Final data Thermal Characteristics Parameter Characteristics SPP20N60C2, SPB20N60C2 SPA20N60C2 Symbol min. Values typ. max. Unit Thermal resistance, junction - case Thremal www.DataSheet4U.com resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 20N60C3 |
Intersil Corporation |
N-Channel IGBT | |
2 | 20N60C3 |
Infineon |
Power Transistor | |
3 | 20N60C5 |
IXYS |
Power MOSFET | |
4 | 20N60CFD |
Infineon |
Cool MOS Power Transistor | |
5 | 20N60 |
ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET | |
6 | 20N60 |
IXYS |
IGBT | |
7 | 20N60 |
UTC |
600V N-CHANNEL POWER MOSFET | |
8 | 20N60A |
IXYS |
IGBT | |
9 | 20N60A |
JieJie |
N-channel MOSFET | |
10 | 20N60A4D |
Fairchild Semiconductor |
HGTG20N60A4D | |
11 | 20N60A4D |
ON Semiconductor |
N-Channel IGBT | |
12 | 20N60B |
IXYS Corporation |
IGBT |