IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 20 A VDSS = 600 V R =DS(on) max 0.2 Ω D TO-247 AD (IXKH) G S G D S TO-220 AB (IXKP) q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 6.
• fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
1) CoolMOS™ is a trademark of Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved
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Source-D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 20N60C2 |
Infineon Technologies |
Power Transistor | |
2 | 20N60C3 |
Intersil Corporation |
N-Channel IGBT | |
3 | 20N60C3 |
Infineon |
Power Transistor | |
4 | 20N60CFD |
Infineon |
Cool MOS Power Transistor | |
5 | 20N60 |
ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET | |
6 | 20N60 |
IXYS |
IGBT | |
7 | 20N60 |
UTC |
600V N-CHANNEL POWER MOSFET | |
8 | 20N60A |
IXYS |
IGBT | |
9 | 20N60A |
JieJie |
N-channel MOSFET | |
10 | 20N60A4D |
Fairchild Semiconductor |
HGTG20N60A4D | |
11 | 20N60A4D |
ON Semiconductor |
N-Channel IGBT | |
12 | 20N60B |
IXYS Corporation |
IGBT |