20N60BD1 - IXYS Corporation

20N60BD1 IGBT

HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125.

Features

• International standard packages
• High frequency IGBT and antiparallel FRED in one package
• High current handling capability
• HiPerFASTTM HDMOSTM process
• MOS Gate turn-on -drive simplicity Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers Advantages
• Space savings (two devices in one package)
• High power density
• Suitable for surface mounting
• Very low switching losses for high frequency applications
• Easy to mount with 1 screw,TO-247 (insulated mounting screw hole) .