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Features
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everse diode dv/dt
IS = 20 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C
A V/ns V W
dv/dt
VGS VGS Ptot
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C
208
34.5
Operating and storage temperature
Page 1
Tj , Tstg
-55...+150
°C
2002-08-12
Final data Thermal Characteristics Parameter Characteristics
SPP20N60C2, SPB20N60C2 SPA20N60C2
Symbol min.
Values typ. max.
Unit
Thermal resistance, junction - case Thremal www.DataSheet4U.com resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, F...
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20N60C2 Data Sheet
