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www.DataSheet.co.kr 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward .
• Low forward voltage
• Low reverse current
1
2
Marking Code: "ZC" SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current ( t = 10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFM IFSM Pd Tj Tstg
Value 12 10 50 150 1 150 125 - 55 to + 125
Unit V V mA mA A
mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at.
1SS321 - Guangdong Kexin Industrial
www.DataSheet.co.kr SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS321 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: m.
1SS321 - Toshiba Semiconductor
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS321 Low-Voltage High-Speed Switching AEC-Q101 Qualified (Note.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1SS322 |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode |
|
| 2 | 1SS322 |
Kexin |
LOW VOLTAGE HIGH SPEED SWITCHING DIODES |
|
| 3 | 1SS300 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 4 | 1SS300 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES |
|
| 5 | 1SS301 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 6 | 1SS301 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE |
|
| 7 | 1SS301 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES |
|
| 8 | 1SS302 |
Toshiba Semiconductor |
Diode |
|
| 9 | 1SS302 |
Guangdong Kexin Industrial |
ULTRA HIGH SPEED SWITCHING APPLICATIONS |
|
| 10 | 1SS302A |
Toshiba |
Silicon Epitaxial Planar Switching Diodes |
|
| 11 | 1SS306 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 12 | 1SS307 |
Toshiba Semiconductor |
Diode |
|