1SS307 - Toshiba Semiconductor

1SS307 Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications  Low forward voltage  Low reverse current  Small total capacitance  Small package : VF = 1.0 V (typ.) : IR = 10 nA (max) : CT = 3.0 pF (typ.) : SC−59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) re.

Features

the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Mounted on a FR4 board. (25.4 mm × 25.4 mm.