1SS322 - Toshiba Semiconductor

1SS322 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS322 Low Voltage High Speed Switching  Low forward voltage  Low reverse current  Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC−70 1SS322 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage .

Features

iate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Condition IF = 1mA IF = 10mA IF = 100mA VR = 40V VR = 0, f = 1MHz Min Typ. Max Unit ― 0.28 ― ― 0.36 ― V ― 0.54 0.60 ― ― 5 μA ― 18 25 pF Marking Start of commercial production 1988-01 1 2015-01-15 1SS322.