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1SS321 |
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| Part Number | 1SS321 |
| Manufacturer | SEMTECH ELECTRONICS |
| Description | www.DataSheet.co.kr 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SO... |
| Features |
• Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current ( t = 10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 12 10 50 150 1 150 125 - 55 to + 125 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at... |
| Document |
 1SS321 Data Sheet
PDF 184.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS321 |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode |
|
| 2 | 1SS321 |
Guangdong Kexin Industrial |
LOW VOLTAGE HIGH SPEED SWITCHING |
|
| 3 | 1SS322 |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode |
|
| 4 | 1SS322 |
Kexin |
LOW VOLTAGE HIGH SPEED SWITCHING DIODES |
|
| 5 | 1SS300 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|