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SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS301 Features Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute Maxim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Reverse voltage Maxim um (peak) forward current Average forward current Surge c.
Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ)
Absolute Maxim um Ratings Ta = 25
Param eter Maxim um (peak) reverse voltage Reverse voltage Maxim um (peak) forward current Average forward current Surge current (10 m s) Power dissipation Junction Tem perature Storage Tem perature (
*) Unit rating.Total rating = Unit rating
1.5
Sym bol VRM VR IFM IO IFSM P Tj T stg
Rating 85 80
300(
*) 100(
*)
2(
*) 100 125 -55 to +125
Unit V V mA mA A
mW
Electrical Characteristics Ta = 25
Parameter Forward voltage
Reverse curren.
1SS301 - Toshiba Semiconductor
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Application 1SS301 Unit: mm AEC-Q101 Q.
1SS301 - XIN SEMICONDUCTOR
XIN SEMICONDUCTOR ISO9002 1SS101 THUR 1SS301 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1SS300 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 2 | 1SS300 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES |
|
| 3 | 1SS302 |
Toshiba Semiconductor |
Diode |
|
| 4 | 1SS302 |
Guangdong Kexin Industrial |
ULTRA HIGH SPEED SWITCHING APPLICATIONS |
|
| 5 | 1SS302A |
Toshiba |
Silicon Epitaxial Planar Switching Diodes |
|
| 6 | 1SS306 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 7 | 1SS307 |
Toshiba Semiconductor |
Diode |
|
| 8 | 1SS307E |
Toshiba |
Diode |
|
| 9 | 1SS308 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 10 | 1SS309 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 11 | 1SS311 |
Toshiba Semiconductor |
Diode |
|
| 12 | 1SS312 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|