1SS319 - Toshiba Semiconductor

1SS319 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching  Small package: SC-61  Low forward voltage: VF (3) = 0.54V (typ.)  Low reverse current: IR = 5μA (max) 1SS319 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 4.

Features

n the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating  1.5. Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Condition IF = 1mA IF = 10mA IF = 100mA VR = 40V VR = 0V , f = 1MHz Min Typ. Max Unit ― 0.28 ― ― 0.36 ― V .