1SS315 - Toshiba Semiconductor

1SS315 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range VRM IF Tj Tstg 5 V 30 mA 125 °C −55 to 125 °C Note: Using continuously u.

Features

ltage Forward current Reverse current Total capacitance Symbol VF IF IR CT Test Condition IF = 2 mA VF = 0.5 V VR = 0.5 V VR = 0.2 V, f = 1 MHz Marking JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Min Typ. Max Unit ⎯ 0.25 ⎯ V 30 ⎯ ⎯ mA ⎯ ⎯ 25 μA ⎯ 0.6 ⎯ pF Start of commercial production 1987-05 1 2014-03-01 1SS315 2 2014-03-01 1SS315 RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and syst.