1SS311 - Toshiba Semiconductor

1SS311 Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 1SS311 High Voltage,High Speed Switching Applications z Low forward voltage : VF = 0.94V (typ.) z High voltage : VR = 400V (min) z Fast reverse recovery time : trr = 1.5ns (typ.) z Small total capacitance : CT = 3.2pF (typ.) z Small package : SC−59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) C.

Features

temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) IR (1) IR (2) CT Test Circuit Test Condition ― IF = 10mA ― IF = 100mA ― VR = 300V ― VR = 400V ― VR = 0, f = 1MHz Reverse recovery.